Design and characterization of depleted monolithic active pixel sensors within the RD50 collaboration

The CERN RD50 CMOS working group is designing and characterizing depleted monolithic active pixel sensors (DMAPS) for use in high radiation environments fabricated the LFoundry 150 nm HV-CMOS process. first iteration of this chip, RD50-MPW1, suffered from leakage current, low breakdown voltage crosstalk. In order to mitigate these shortcomings, an improved version with geometry was designed. RD50-MPW2 integrates a matrix 8 × pixels analog front-end, but no digital readout. It delivered early 2020 characterized within lab-measurements, irradiation campaign test beams. To read out chips Caribou DAQ system used custom chipboard as well specific firmware software modules. A third RD50-MPW3, has been submitted December 2021 expected be May 2022. will keep part its predecessor, completed by in-pixel logic optimized peripheral readout effective configuration fast serial data transmission. chip comprise 64 arranged 32 double-columns. We present overview activities focusing on measurement results design RD50-MPW3.